Magnetoresistance and Rashba Spin-Orbit Coupling
Exploring the impact of Rashba SOC on magnetoresistance in spintronic devices.
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Table of Contents
Magnetoresistance (MR) is a significant property in the field of spintronics, which studies the use of electron spin in electronic devices. MR refers to the change in electrical resistance when an external magnetic field is applied. This property is particularly useful for applications involving magnetic sensors and storage devices.
Typically, devices with multiple magnetic regions provide a larger MR due to the spin-valve effect. This effect means the resistance of a system varies based on the alignment of magnetization in these regions. A notable discovery in the 1850s showed that even a single bulk ferromagnet exhibits a type of MR called anisotropic MR (AMR). In this case, resistance changes with the direction of the charge current relative to the magnetization of the ferromagnet.
Another example of MR with a single ferromagnet is tunneling AMR (TAMR), which also shows this interplay between spin-orbit coupling (SOC) and magnetization. However, both AMR and TAMR tend to have low magnitudes, especially when the magnetization rotates in the plane.
Understanding Rashba Spin-orbit Coupling
In a two-dimensional electron gas (2DEG) and in certain Superconductors, Rashba spin-orbit coupling (SOC) can significantly affect MR. This means that when electrons move through materials with Rashba SOC, the resulting interactions between their spin and motion can lead to large changes in resistance even with just one ferromagnet present.
Interestingly, this enhanced MR is not uniform across different setups. It can vary in nonmonotonic ways, meaning the change in resistance does not follow a simple increasing or decreasing pattern. In some cases, the sign of the MR can even change due to the influence of Rashba SOC.
When looking at in-plane rotations of magnetization, the MR can be minuscule in those setups-especially in 2DEG systems. This small effect is primarily due to the transmission properties that arise from the symmetry of the scattering states, which typically do not come from the Hamiltonian of the system itself.
Role of Andreev Reflection in Magnetoresistance
A crucial difference when examining MR in superconductors compared to normal states is the presence of Andreev reflection at the interface between a ferromagnet and a superconductor. During Andreev reflection, an incoming electron from the ferromagnet can be reflected as a hole while allowing a Cooper pair (a bound state of two electrons) to enter the superconductor. This process can influence the spin states and thus the transmission properties at the interface.
In specifically designed junctions combining quasi-2D van der Waals Ferromagnets with conventional superconductors, we can see enhanced magnetoresistance due to reduced interfacial strength when Rashba SOC is in play. This setup promotes equal-spin Andreev reflection, leading to distinct trends in MR, especially when considering the barrier properties at the interface.
Experimental Observations of Magnetoresistance
Recent experiments in junctions made of ferromagnet/superconductor combinations have shown a remarkable increase in MR, providing strong evidence for the presence of equal-spin-triplet superconductivity. This phenomenon indicates a new area of research where scientists look for ways to achieve coexistence between ferromagnetism and superconductivity.
Theoretical Models and Predictions
To better understand how MR works in systems with Rashba SOC, scientists use theoretical models to describe how the underlying physics leads to the observed behaviors. One key aspect to consider is the Hamiltonian of the system that defines the energy levels and interactions among particles.
In these models, the effective strength of barriers formed between different materials is crucial. The barriers influence how easily electrons can traverse between regions, affecting the overall conductance. When Rashba SOC is present, it alters the barrier properties, which can lead to dramatic effects on how the system behaves electrically.
Using these insights, researchers can predict how different configurations and parameters will influence MR. By exploring various factors such as the strength of barriers and the properties of the materials involved, scientists can identify conditions that lead to enhanced MR.
Mechanisms Behind Enhanced Magnetoresistance
The enhanced magnetoresistance is thought to arise from the interplay between the induced exchange field and Rashba SOC. These mechanisms are responsible for the unique behaviors observed in these systems.
When the ferromagnet’s magnetization is manipulated, it can lead to significant variations in how electrons are transmitted through the materials. Specifically, when the incoming electrons interact at barriers, the effects of spin and motion become vital. This interplay can lead to conditions where transmission and reflection probabilities change, impacting overall resistance.
Nonmonotonic Trends and Their Significance
One of the most intriguing characteristics observed is the nonmonotonic trends in magnetoresistance. As parameters such as barrier strength or the angle of magnetization are varied, resistance can increase, decrease, or even change direction unexpectedly. This complexity hints at deep underlying physics that could be leveraged in technological applications.
Understanding these nonmonotonic trends helps provide further insight into the behavior of spin currents and the interactions occurring at these critical interfaces. They also underscore the importance of carefully selecting materials and configurations to enhance MR effects in practical applications.
Future Directions in Research and Applications
The insights gained from studying magnetoresistance in systems with Rashba SOC open up exciting avenues for future research. Researchers are keen to explore how these effects can be expanded to other types of materials and configurations, particularly in the realm of two-dimensional materials that exhibit strong SOC.
There is a growing interest in how these systems can be utilized in spintronic devices, potentially leading to new technologies that harness the unique properties of spin currents. Moreover, exploring the relationship between magnetoresistance and superconductivity could lead to innovative applications in areas like quantum computing, where robust systems are necessary for efficient operation.
Conclusion
In summary, Rashba spin-orbit coupling plays a significant role in enhancing magnetoresistance in junctions with a single ferromagnet. This phenomenon, along with its complex characteristics and the implications for current technologies, provides an exciting field for investigation. The understanding gained from these studies can contribute to the development of advanced electronic devices that leverage the unique properties of spin and magnetism.
Title: Rashba spin-orbit coupling enhanced magnetoresistance in junctions with one ferromagnet
Abstract: We explain how Rashba spin-orbit coupling (SOC) in a two-dimensional electron gas (2DEG), or in a conventional $s$-wave superconductor, can lead to a large magnetoresistance even with one ferromagnet. However, such enhanced magnetoresistance is not generic and can be nonmonotonic and change its sign with Rashba SOC. For an in-plane rotation of magnetization, it is typically negligibly small for a 2DEG and depends on the perfect transmission which emerges from a spin-parity-time symmetry of the scattering states, while this symmetry is generally absent from the Hamiltonian of the system. The key difference from considering the normal-state magnetoresistance is the presence of the spin-dependent Andreev reflection at superconducting interfaces. In the fabricated junctions of quasi-2D van der Waals ferromagnets with conventional $s$-wave superconductors (Fe$_{0.29}$TaS$_2$/NbN) we find another example of enhanced magnetoresistance where the presence of Rashba SOC reduces the effective interfacial strength and is responsible for an equal-spin Andreev reflection. The observed nonmonotonic trend in the out-of-plane magnetoresistance with the interfacial barrier is an evidence for the proximity-induced equal-spin-triplet superconductivity.
Authors: Chenghao Shen, Ranran Cai, Alex Matos-Abiague, Wei Han, Jong E. Han, Igor Zutic
Last Update: 2023-02-28 00:00:00
Language: English
Source URL: https://arxiv.org/abs/2303.00185
Source PDF: https://arxiv.org/pdf/2303.00185
Licence: https://creativecommons.org/licenses/by/4.0/
Changes: This summary was created with assistance from AI and may have inaccuracies. For accurate information, please refer to the original source documents linked here.
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