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Excitons in Twisted Hexagonal Boron Nitride

Studying excitons in twisted hBN reveals new light-emitting properties.

― 5 min read


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Two-dimensional (2D) materials, like Hexagonal Boron Nitride (hBN), are exciting because they can be layered and combined in various ways. These combinations can change how Excitons behave. An exciton is a pair of an electron and a hole that are bound together. One key question is how the structure of these layers affects excitons.

This article discusses how we studied excitons in twisted hBN. Twisted hBN consists of two hBN layers that are rotated at certain angles to each other. Our experiments show how excitons can get trapped at the interfaces between these twisted layers, creating long-lasting excitons that can emit light.

What is Hexagonal Boron Nitride?

Hexagonal boron nitride is a popular material in the field of 2D materials. It acts as an insulator and is often used as a substrate or cap for other 2D materials. When we stack hBN layers at different angles, we create new properties that can be very different from a single layer of hBN.

When two layers are twisted at small angles, their properties change due to the appearance of new patterns called Moiré superlattices. These patterns can lead to interesting changes in electronic properties. At larger angles, hBN-hBN structures can create strong light signals that were not present in single hBN layers.

Why Do We Care About Excitons?

Excitons are important for creating new electronic devices. Their behavior can be controlled using various methods, like tweaking the structures they are in. Excitons can affect how light is emitted, how fast they move, and how they interact with other particles. When we understand excitons better, we can use them for advanced technologies like light-emitting devices and electronic components that rely on excitons.

Self-Trapping of Excitons

One intriguing thing we discovered is a phenomenon called 'self-trapping' of excitons. This occurs when an exciton distorts the surrounding material's structure, creating a place where it stays trapped. This process happens at the interface between two twisted layers of hBN.

When the layers are twisted enough, the excitons can become self-trapped, leading to unusual light-emitting behavior that we measured using specialized tools. We discovered that these trapped excitons can emit light around 300 nanometers, which is in the ultraviolet range.

Experimental Method

To study self-trapping in hBN, we created multiple twisted hBN structures at different angles. We used a scanning electron microscope equipped with an advanced system to measure how light is emitted from the samples. Our experimental setup allowed us to analyze the behavior of excitons in these structures at various temperatures.

We focused on structures made from hBN sourced through different methods, which influenced their quality. By comparing the properties of these samples, we aimed to uncover how excitons behave in different scenarios, especially when it comes to their trapping and emission.

Observations from our Experiments

When we looked closely at the emissions from various twisted hBN structures, we found that the light at around 300 nm mainly appears in structures with high twist angles. For lower angles, we saw little to no emission. The results indicated that the presence of an interface between the twisted layers plays a crucial role in the production of light.

We also explored how temperature affects excitons. As we raised the temperature, the behavior of the excitons changed, which influenced their trapping and emission properties.

The Role of Temperature

Temperature plays a significant role in the behavior of excitons. At lower temperatures, excitons can remain trapped more easily. However, as the temperature increases, the chances of these excitons being released from their trapped state grow.

Our findings showed that the Luminescence from self-trapped excitons becomes more pronounced at specific temperatures, which suggests a kind of balance between trapping and releasing behaviors. We measured how the emitted light changed with temperature, confirming the relationship between exciton trapping and temperature.

Insights into the Self-Trapping Mechanism

Through our research, we gathered evidence that self-trapping is a crucial factor in the behavior of excitons at the interface of twisted hBN structures. We believe that the shape and arrangement of the material allow excitons to get trapped effectively.

The degree of twist between layers appears to enhance the possibilities for exciton self-trapping. When the layers are twisted, the interactions between the excitons and the material increase, leading to more opportunities for self-trapping.

Impacts on Technology

Understanding how excitons self-trap could pave the way for new technologies. For instance, devices that rely on light emission could benefit from the unique properties of self-trapped excitons. High-efficiency light sources or sensors could emerge from this research.

Moreover, exploring exciton behaviors and interactions could lead to advancements in electronic devices that use excitons for information processing. The knowledge gained can encourage further studies into how we can manipulate exciton behavior for the creation of new types of devices.

Conclusion

The study of exciton self-trapping in twisted hBN layers reveals important insights into how these 2D materials behave. Our findings underline how the structure and arrangement of materials can influence exciton properties significantly.

As we continue to explore this area, more discoveries could lead to exciting advancements in both fundamental research and practical applications in technology. This work highlights the potential of 2D materials like hBN in developing the next generation of electronic and optoelectronic devices.

As we deepen our understanding, we may unlock the full potential of excitons, paving the way for cutting-edge applications that can transform various fields such as telecommunications, computing, and beyond.

Original Source

Title: Exciton self-trapping in twisted hexagonal boron nitride homostructures

Abstract: One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence (CL) and time-resolved CL experiments to study how excitons interact with the interface between two twisted hexagonal boron nitride (hBN) crystals with various angles. An efficient capture of free excitons by the interface is demonstrated, which leads to a population of long lived and interface-localized (2D) excitons. Temperature dependent experiments indicate that for high twist angles, these excitons localized at the interface further undergo a self-trapping. It consists in a distortion of the lattice around the exciton on which the exciton traps itself. Our results suggest that this exciton-interface interaction causes a broad optical emission of highly twisted hBN-hBN structures around 300 nm (4 eV). Exciton self-trapping is finally discussed as a common feature of sp2 hybridized boron nitride polytypes and nanostructures due to the ionic nature of the B-N bond and their compact excitons.

Authors: Sébastien Roux, Christophe Arnold, Etienne Carré, Alexandre Plaud, Lei Ren, Eli Janzen, James H. Edgar, Camille Maestre, Bérangère Toury, Catherine Journet, Vincent Garnier, Philippe Steyer, Takashi Taniguchi, Kenji Watanabe, Cédric Robert, Xavier Marie, Annick Loiseau, Julien Barjon

Last Update: 2024-05-15 00:00:00

Language: English

Source URL: https://arxiv.org/abs/2405.09420

Source PDF: https://arxiv.org/pdf/2405.09420

Licence: https://creativecommons.org/licenses/by/4.0/

Changes: This summary was created with assistance from AI and may have inaccuracies. For accurate information, please refer to the original source documents linked here.

Thank you to arxiv for use of its open access interoperability.

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