Silicon Sensors and Their Role in High-Energy Physics
Exploring the performance of silicon sensors in radiation environments.
― 4 min read
Table of Contents
- The Role of Silicon Sensors in High-Energy Physics
- Types of Silicon Sensors
- Understanding Radiation Effects
- Positive Charges and Isolation
- The Challenges of Isolation Implants
- Recent Studies on Sensor Performance
- Experimental Setup
- Key Findings
- Implications for Future Experiments
- Conclusion
- Original Source
- Reference Links
Silicon Sensors are devices used in various scientific fields to measure and collect data. These sensors are crucial for experiments in high-energy physics, like those conducted at the Large Hadron Collider (LHC). The LHC is a massive particle accelerator that helps scientists study the smallest particles in the universe. This article will discuss a specific type of silicon sensor and its Performance under challenging conditions such as Radiation exposure.
The Role of Silicon Sensors in High-Energy Physics
Silicon sensors are primarily used in particle detectors to observe the behavior of particles after they collide at high speeds. These sensors are essential in detecting charged particles and measuring their energy and position. In projects like the Compact Muon Solenoid (CMS), silicon sensors are vital components of the detector system, helping researchers make discoveries about matter at a fundamental level.
Types of Silicon Sensors
There are different types of silicon sensors, including p-type and n-type sensors. The basic difference is based on the type of charge carriers they use. P-type sensors use holes (the absence of an electron), while n-type sensors use electrons. P-type sensors are often preferred in high-radiation environments because they can handle radiation better than traditional sensors.
Understanding Radiation Effects
When silicon sensors are used in environments with high levels of radiation, like those found in the LHC, they can accumulate Defects. These defects influence how well the sensors operate. Radiation can generate charged particles that impact the sensor's ability to detect other particles accurately.
Positive Charges and Isolation
Radiation can create a positive charge that develops under the surface of the sensor. This positive charge can attract electrons from the silicon bulk to the surface, leading to a situation where the sensors lose their ability to isolate different electrodes effectively.
To counteract this problem, additional structures known as isolation implants are often included between the electrodes. These implants help maintain the sensor's performance by preventing unwanted conduction paths that can arise from accumulated positive charges.
The Challenges of Isolation Implants
While isolation implants improve performance, they come with a downside. The fabrication of silicon sensors with these implants is more complicated and expensive. It involves multiple steps during the manufacturing process, leading to increased costs.
In some cases, researchers are exploring the possibility of creating silicon sensors without these isolation implants. This could not only reduce costs but also simplify the sensor design.
Recent Studies on Sensor Performance
Recent research focused on the performance of silicon sensors with and without isolation implants in environments with mixed radiation. Researchers aimed to understand how these different designs would hold up when exposed to high doses of radiation.
Experimental Setup
To carry out the study, researchers used test diodes and multi-channel sensors from silicon wafers. They subjected these devices to various types of radiation, including neutrons and protons, to see how well they performed when irradiated.
The measurements looked at how voltage affected the sensors' ability to maintain isolation and resistivity. It was important to observe how the sensors reacted under different conditions, particularly when exposed to radiation.
Key Findings
Performance Without Isolation Implants: Tests showed that silicon sensors could still maintain adequate performance even without isolation implants, particularly in environments with a high presence of neutrons and hadrons. This suggests that further studies could lead to sensors that are simpler and cheaper to manufacture.
Radiation-Induced Defects: The research confirmed that radiation leads to the generation of defects in silicon sensors. These defects can change how the sensors work, but in some cases, they actually improved the isolation between electrodes instead of degrading it.
Cost-Effectiveness: By removing the need for isolation implants, the manufacturing process for silicon sensors could become less complex and more cost-effective, making them more accessible for future experiments.
Implications for Future Experiments
The findings from these studies have significant implications for future experiments in high-energy physics. If researchers can develop reliable silicon sensors without isolation implants, it would lead to substantial cost savings and improve the scalability of detector systems used in experiments like those at the LHC.
Conclusion
Silicon sensors are vital tools for studying particles at an atomic level, particularly in high-energy physics. Understanding how these sensors behave in the presence of radiation is crucial for improving their performance and designing future devices. Continued research into the development of simpler, more cost-effective silicon sensors without isolation implants shows promise for advancing technology in this area.
Overall, the potential to maintain effective performance even in high radiation environments while simplifying the manufacturing process presents exciting opportunities for future scientific endeavors.
Title: Modeling of surface-state induced inter-electrode isolation of $n$-on-$p$ devices in mixed-field and $\gamma$-irradiation environments
Abstract: In the HEP-experiments of High Luminosity upgrade of the Large Hadron Collider (HL-LHC), the application of isolation implants like $p$-stop between $n^+$-electrodes of position sensitive $n$-on-$p$ sensors has been typically considered to counter the detrimental effect on position resolution of the accumulation of positive net oxide charge with radiation. In addition to the positively charged layer close to the Si/SiO$_2$-interface, surface damage introduced by radiation in SiO$_2$-passivated silicon particle detectors includes the accumulation of trapped-oxide-charge and interface traps. A previous study of either n/$\gamma$ (mixed field)- or $\gamma$-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed evidence of substantially higher introduction rates of acceptor- and donor-type deep interface traps ($N_\textrm{it,acc/don}$) in mixed-field environment. In this work, an inter-electrode resistivity ($\rho_\textrm{int}$) TCAD-simulation study of $n$-on-$p$ sensors with and without $p$-stop isolation implants was conducted for both irradiation types. Higher levels of $\rho_\textrm{int}$ showed correlation to higher densities of deep $N_\textrm{it,acc/don}$, with the isolation performance of the mixed-field irradiated sensors becoming independent of the presence of $p$-stop implant between the $n^+$-electrodes throughout the investigated dose range up to about 100 kGy. The low introduction rates of deep $N_\textrm{it,acc/don}$ in $\gamma$-irradiated sensors resulted in high sensitivity of $\rho_\textrm{int}$ to the presence and peak doping of $p$-stop above the lowest dose of 7 kGy in the study. Because of the advantageous influence of radiation-induced accumulation of deep $N_\textrm{it}$ on the inter-electrode isolation, position sensitive $n$-on-$p$ sensors without isolation implants may be considered for future HEP-experiments where the radiation is largely due to hadrons.
Authors: N. Akchurin, T. Peltola
Last Update: 2024-09-18 00:00:00
Language: English
Source URL: https://arxiv.org/abs/2407.18415
Source PDF: https://arxiv.org/pdf/2407.18415
Licence: https://creativecommons.org/licenses/by/4.0/
Changes: This summary was created with assistance from AI and may have inaccuracies. For accurate information, please refer to the original source documents linked here.
Thank you to arxiv for use of its open access interoperability.
Reference Links
- https://rd50.web.cern.ch/rd50
- https://www.ctan.org/tex-archive/macros/latex/contrib/elsarticle
- https://www.rinsc.ri.gov/
- https://mnrc.ucdavis.edu/
- https://www.sandia.gov/research/gamma-irradiation-facility-and-low-dose-rate-irradiation-facility/
- https://gitlab.cern.ch/CLICdp/HGCAL/
- https://www.synopsys.com